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PD同步整流MOS—AGM085N10

2021-01-25 10:09 by

PD同步整流MOS—AGM085N10


● General Deion 

The AGM085N10 combines advanced trench MOSFET technology with a low resistance package

to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. 

● Features

■ Advance high cell density Trench technology

■Low RDS(ON) to minimize conductive loss

■Low Gate Charge for fast switching

■Low Thermal resistance

●Application

■MB/VGA Vcore

■SMPS 2nd Synchronous Rectifier

■POL application

■BLDC Motor driver

Product Summary 

BVDSS:100V

RDSON:7.5毫欧

ID :80A

AGM085N10.jpg

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